PART |
Description |
Maker |
SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
SFRC9130S.5B |
10 AMP /100 Volts 300 mRadiation Tolerant P-Channel MOSFET 10 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
SI4982DY SI4982DY-T1 |
2.6 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Dual N-Channel 100-V (D-S) MOSFET Dual N-Channel, 100-V, (D-S) Rated MOSFET
|
VISHAY INTERTECHNOLOGY INC VISAY[Vishay Siliconix]
|
MTP10N10EL MTP10N10ELG |
Power MOSFET 10 Amps, 100 Volts, Logic Level; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220
|
ON Semiconductor
|
AP18P10GH AP18P10GJ |
12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ADVANCED POWER ELECTRONICS CORP Advanced Power Electronics Corp.
|
SFF75N10Z SFF75N10M SFF75N10MD SOLIDSTATEDEVICESIN |
75 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
|
SOLID STATE DEVICES INC SSDI[Solid States Devices, Inc]
|
BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V,N通道SOT3封装的功率MOSFET) TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM100DY-24H |
Dual IGBTMOD 100 Amperes/1200 Volts 100 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
|